Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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3,645
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Renesas Electronics America MOSFET N-CH 250V 1A TO-92 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-226-3, TO-92-3 Long Body TO-92MOD 900mW (Ta) N-Channel 250V 1A (Ta) 2.6 Ohm @ 500mA, 4V - 5.5nC @ 4V 140pF @ 25V 2.5V, 4V ±10V
STD3NM50T4
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1,649
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STMicroelectronics MOSFET N-CH 550V 3A DPAK MDmesh™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 46W (Tc) N-Channel 550V 3A (Tc) 3 Ohm @ 1.5A, 10V 5V @ 250µA 5.5nC @ 10V 140pF @ 25V 10V ±30V
RSR010N10TL
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1,447
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Rohm Semiconductor MOSFET N-CH 100V 1.0A TSMT3 - Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-96 TSMT3 540mW (Ta) N-Channel 100V 1A (Ta) 520 mOhm @ 1A, 10V 2.5V @ 1mA 3.5nC @ 5V 140pF @ 25V 4V, 10V ±20V
RSR010N10TL
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1,891
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Rohm Semiconductor MOSFET N-CH 100V 1.0A TSMT3 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-96 TSMT3 540mW (Ta) N-Channel 100V 1A (Ta) 520 mOhm @ 1A, 10V 2.5V @ 1mA 3.5nC @ 5V 140pF @ 25V 4V, 10V ±20V
RSR010N10TL
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3,231
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Rohm Semiconductor MOSFET N-CH 100V 1.0A TSMT3 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-96 TSMT3 540mW (Ta) N-Channel 100V 1A (Ta) 520 mOhm @ 1A, 10V 2.5V @ 1mA 3.5nC @ 5V 140pF @ 25V 4V, 10V ±20V