Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
HAT2131R-EL-E
RFQ
VIEW
RFQ
3,473
In-stock
Renesas Electronics America MOSFET N-CH 8SO - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOP 2.5W (Ta) N-Channel 350V 900mA (Ta) 3 Ohm @ 450mA, 10V - 20nC @ 10V 460pF @ 25V 4V, 10V ±20V
R6006ANDTL
RFQ
VIEW
RFQ
2,291
In-stock
Rohm Semiconductor MOSFET N-CH 600V 6A CPT - Not For New Designs Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 CPT3 40W (Tc) N-Channel 600V 6A (Tc) 1.2 Ohm @ 3A, 10V 4.5V @ 1mA 15nC @ 10V 460pF @ 25V 10V ±30V
R6006ANDTL
RFQ
VIEW
RFQ
3,722
In-stock
Rohm Semiconductor MOSFET N-CH 600V 6A CPT - Not For New Designs Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 CPT3 40W (Tc) N-Channel 600V 6A (Tc) 1.2 Ohm @ 3A, 10V 4.5V @ 1mA 15nC @ 10V 460pF @ 25V 10V ±30V
R6006ANDTL
RFQ
VIEW
RFQ
2,091
In-stock
Rohm Semiconductor MOSFET N-CH 600V 6A CPT - Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 CPT3 40W (Tc) N-Channel 600V 6A (Tc) 1.2 Ohm @ 3A, 10V 4.5V @ 1mA 15nC @ 10V 460pF @ 25V 10V ±30V