- Manufacture :
- Series :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,309
In-stock
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ON Semiconductor | MOSFET N-CH 60V 74A TO220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220-3 Fullpack/TO-220F-3SG | 2W (Ta), 35W (Tc) | N-Channel | - | 60V | 74A (Ta) | 6.1 mOhm @ 37A, 10V | 2.6V @ 1mA | 135nC @ 10V | 6900pF @ 20V | 4V, 10V | ±20V | |||
|
VIEW |
1,008
In-stock
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ON Semiconductor | MOSFET N-CH 60V 100A TO220-3 | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 1.75W (Ta), 75W (Tc) | N-Channel | - | 60V | 100A (Ta) | 7.2 mOhm @ 50A, 10V | - | 135nC @ 10V | 6900pF @ 20V | 4V, 10V | ±20V | |||
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|
VIEW |
1,422
In-stock
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ON Semiconductor | MOSFET N-CH 60V 74A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220-3 Fullpack/TO-220F-3SG | 2W (Ta), 35W (Tc) | N-Channel | - | 60V | 74A (Ta) | 6.1 mOhm @ 37A, 10V | 2.6V @ 1mA | 135nC @ 10V | 6900pF @ 20V | 4V, 10V | ±20V | |||
|
VIEW |
3,498
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 600V 38.8A TO-3P(N) | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 270W (Tc) | N-Channel | Super Junction | 600V | 38.8A (Ta) | 65 mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 135nC @ 10V | 4100pF @ 300V | 10V | ±30V | |||
|
VIEW |
3,286
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 61.8A TO-247 | DTMOSIV-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 400W (Tc) | N-Channel | Super Junction | 600V | 61.8A (Ta) | 40 mOhm @ 21A, 10V | 3.5V @ 3.1mA | 135nC @ 10V | 6500pF @ 300V | 10V | ±30V | |||
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|
VIEW |
2,245
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 38.8A T0247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 270W (Tc) | N-Channel | - | 600V | 38.8A (Ta) | 74 mOhm @ 19.4A, 10V | 4.5V @ 1.9mA | 135nC @ 10V | 4100pF @ 300V | 10V | ±30V | |||
