- Manufacture :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,581
In-stock
|
Renesas Electronics America | MOSFET N-CH 450V 39A TO3P | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 200W (Tc) | N-Channel | - | 450V | 39A (Ta) | 130 mOhm @ 19.5A, 10V | - | 93nC @ 10V | 4100pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,152
In-stock
|
STMicroelectronics | MOSFET N-CH 650V 49A TO247 | MDmesh™ M2 | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 358W (Tc) | N-Channel | - | 650V | 49A (Tc) | 62 mOhm @ 24.5A, 10V | 4V @ 250µA | 93nC @ 10V | 3900pF @ 100V | 10V | ±25V | |||
|
VIEW |
1,951
In-stock
|
STMicroelectronics | MOSFET N-CH 650V I2PAKFP | MDmesh™ M2 | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 358W (Tc) | N-Channel | - | 650V | 49A (Tc) | 62 mOhm @ 24.5A, 10V | 4V @ 250µA | 93nC @ 10V | 3900pF @ 100V | 10V | ±25V |