- Series :
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- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,083
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 1.9A UFV | U-MOSIII | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD (5 Leads), Flat Lead | UFV | 500mW (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 1.9A (Ta) | 133 mOhm @ 1A, 4V | 1V @ 1mA | 1.9nC @ 4V | 123pF @ 15V | 1.8V, 4V | ±12V | ||||
VIEW |
1,769
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 4A TSM | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | - | 30V | 4A (Ta) | 53 mOhm @ 3A, 10V | 1V @ 1mA | 4.3nC @ 4V | 270pF @ 10V | 1.8V, 10V | ±12V | ||||
VIEW |
2,151
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 30V 3.5A 2-3Z1A | U-MOSIII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 30V | 3.5A (Ta) | 126 mOhm @ 1A, 4V | 1V @ 1mA | 1.5nC @ 4V | 123pF @ 15V | 1.8V, 4V | ±12V | ||||
VIEW |
3,929
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.3A ES6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | N-Channel | - | 30V | 2.3A (Ta) | 85 mOhm @ 1.5A, 4V | 1V @ 1mA | - | 270pF @ 10V | 1.8V, 4V | ±12V |