Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2SK1119(F)
RFQ
VIEW
RFQ
2,164
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 1000V 4A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel - 1000V 4A (Ta) 3.8 Ohm @ 2A, 10V 3.5V @ 1mA 60nC @ 10V 700pF @ 25V 10V ±20V
STP4NB100
RFQ
VIEW
RFQ
1,458
In-stock
STMicroelectronics MOSFET N-CH 1KV 3.8A TO-220 PowerMESH™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 125W (Tc) N-Channel - 1000V 3.8A (Tc) 4.4 Ohm @ 2A, 10V 5V @ 250µA 45nC @ 10V 1400pF @ 25V 10V ±30V
STW8NB100
RFQ
VIEW
RFQ
1,696
In-stock
STMicroelectronics MOSFET N-CH 1KV 7.3A TO-247 PowerMESH™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247-3 190W (Tc) N-Channel - 1000V 7.3A (Tc) 1.45 Ohm @ 3.6A, 10V 5V @ 250µA 95nC @ 10V 2900pF @ 25V 10V ±30V
STP3NB100
RFQ
VIEW
RFQ
3,951
In-stock
STMicroelectronics MOSFET N-CH 1KV 3A TO-220 PowerMESH™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel - 1000V 3A (Tc) 6 Ohm @ 1.5A, 10V 4V @ 250µA 30nC @ 10V 700pF @ 25V 10V ±30V