- Manufacture :
- Part Status :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
2,642
In-stock
|
Rohm Semiconductor | MOSFET P-CH 20V 0.2A EMT3 | - | Not For New Designs | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | EMT3 | 150mW (Ta) | P-Channel | - | 20V | 200mA (Ta) | 1.2 Ohm @ 200mA, 4.5V | 1V @ 100µA | 1.4nC @ 4.5V | 115pF @ 10V | 1.2V, 4.5V | ±10V | |||
|
VIEW |
1,325
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 20V 250MA SSM | U-MOSIII | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM | 500mW (Ta) | N-Channel | - | 20V | 250mA (Ta) | 1.1 Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | 36pF @ 10V | 1.2V, 4.5V | ±10V | |||
