Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
PSMN1R7-25YLC,115
RFQ
VIEW
RFQ
2,551
In-stock
NXP USA Inc. MOSFET N-CH 25V 100A LFPAK - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 164W (Tc) N-Channel - 25V 100A (Tc) 1.9 mOhm @ 25A, 10V 1.95V @ 1mA 59nC @ 10V 3735pF @ 12V 4.5V, 10V ±20V
BUK661R8-30C,118
RFQ
VIEW
RFQ
2,031
In-stock
Nexperia USA Inc. MOSFET N-CH 30V 120A D2PAK Automotive, AEC-Q101, TrenchMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 263W (Tc) N-Channel - 30V 120A (Tc) 1.9 mOhm @ 25A, 10V 2.8V @ 1mA 168nC @ 10V 10918pF @ 25V 4.5V, 10V ±16V
PSMN1R6-30BL,118
RFQ
VIEW
RFQ
1,306
In-stock
Nexperia USA Inc. MOSFET N-CH 30V 100A D2PAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 306W (Tc) N-Channel - 30V 100A (Tc) 1.9 mOhm @ 25A, 10V 2.15V @ 1mA 212nC @ 10V 12493pF @ 15V 4.5V, 10V ±20V
BUK661R9-40C,118
RFQ
VIEW
RFQ
1,262
In-stock
Nexperia USA Inc. MOSFET N-CH 40V 120A D2PAK Automotive, AEC-Q101, TrenchMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 306W (Tc) N-Channel - 40V 120A (Tc) 1.9 mOhm @ 25A, 10V 2.8V @ 1mA 260nC @ 10V 15100pF @ 25V 10V ±16V