Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SUD50N06-07L-E3
RFQ
VIEW
RFQ
2,941
In-stock
Vishay Siliconix MOSFET N-CH 60V 96A TO252 TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 136W (Tc) N-Channel - 60V 96A (Tc) 7.4 mOhm @ 20A, 10V 3V @ 250µA 144nC @ 10V 5800pF @ 25V 4.5V, 10V ±20V
SUD50N06-07L-GE3
RFQ
VIEW
RFQ
1,534
In-stock
Vishay Siliconix MOSFET N-CH 60V 96A DPAK TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 136W (Tc) N-Channel - 60V 96A (Tc) 7.4 mOhm @ 20A, 10V 3V @ 250µA 144nC @ 10V 5800pF @ 25V 4.5V, 10V ±20V
IPT111N20NFDATMA1
RFQ
VIEW
RFQ
3,021
In-stock
Infineon Technologies MOSFET N-CH 200V 96A HSOF-8 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerSFN PG-HSOF-8 375W (Tc) N-Channel - 200V 96A (Tc) 11.1 mOhm @ 96A, 10V 4V @ 267µA 87nC @ 10V 7000pF @ 100V 10V ±20V