Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTC180N085T
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2,619
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IXYS MOSFET N-CH 85V 110A ISOPLUS220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole ISOPLUS220™ ISOPLUS220™ 150W (Tc) N-Channel - 85V 110A (Tc) 6.1 mOhm @ 25A, 10V 4V @ 250µA 170nC @ 10V 8800pF @ 25V 10V ±20V
IXTH160N15T
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1,431
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IXYS MOSFET N-CH 150V 160A TO-247 TrenchHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 830W (Tc) N-Channel - 150V 160A (Tc) 9.6 mOhm @ 500mA, 10V 5V @ 1mA 160nC @ 10V 8800pF @ 25V 10V ±30V
IXTH130N20T
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1,739
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IXYS MOSFET N-CH 200V 130A TO-247 TrenchHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 830W (Tc) N-Channel - 200V 130A (Tc) 16 mOhm @ 500mA, 10V 5V @ 1mA 150nC @ 10V 8800pF @ 25V 10V ±20V
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RFQ
1,785
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Vishay Siliconix MOSFET N-CH 60V 120A TO262-3 Automotive, AEC-Q101, TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 250W (Tc) N-Channel - 60V 120A (Tc) 4.7 mOhm @ 30A, 10V 2.5V @ 250µA 230nC @ 10V 8800pF @ 25V 4.5V, 10V ±20V
IXFH160N15T
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1,904
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IXYS MOSFET N-CH 150V 160A TO-247 TrenchHV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 830W (Tc) N-Channel - 150V 160A (Tc) 9.6 mOhm @ 500mA, 10V 5V @ 1mA 160nC @ 10V 8800pF @ 25V 10V ±30V