- Manufacture :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,562
In-stock
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IXYS | MOSFET N-CH 200V 210A PLUS264 | HiPerFET™, PolarP2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-264-3, TO-264AA | PLUS264™ | 1500W (Tc) | N-Channel | - | 200V | 210A (Tc) | 10.5 mOhm @ 105A, 10V | 4.5V @ 8mA | 255nC @ 10V | 18600pF @ 25V | 10V | ±20V | ||||
VIEW |
2,365
In-stock
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IXYS | MOSFET N-CH 200V 188A SOT-227B | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 1070W (Tc) | N-Channel | - | 200V | 188A (Tc) | 10.5 mOhm @ 105A, 10V | 4.5V @ 8mA | 255nC @ 10V | 18600pF @ 25V | 10V | ±20V | ||||
VIEW |
3,065
In-stock
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Infineon Technologies | MOSFET N-CH 100V 192A TO-220AB | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 441W (Tc) | N-Channel | - | 100V | 192A (Tc) | 4.2 mOhm @ 115A, 10V | 4V @ 250µA | 255nC @ 10V | 9500pF @ 50V | 10V | ±20V | ||||
VIEW |
3,984
In-stock
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Infineon Technologies | MOSFET N-CH 100V 192A D2PAK | HEXFET®, StrongIRFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 441W (Tc) | N-Channel | - | 100V | 192A (Tc) | 4.2 mOhm @ 115A, 10V | 4V @ 250µA | 255nC @ 10V | 9500pF @ 50V | 10V | ±20V | ||||
VIEW |
833
In-stock
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Infineon Technologies | MOSFET N-CH 100V 192A D2PAK | HEXFET®, StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 441W (Tc) | N-Channel | - | 100V | 192A (Tc) | 4.2 mOhm @ 115A, 10V | 4V @ 250µA | 255nC @ 10V | 9500pF @ 50V | 10V | ±20V | ||||
VIEW |
2,002
In-stock
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Infineon Technologies | MOSFET N-CH 100V 192A D2PAK | HEXFET®, StrongIRFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 441W (Tc) | N-Channel | - | 100V | 192A (Tc) | 4.2 mOhm @ 115A, 10V | 4V @ 250µA | 255nC @ 10V | 9500pF @ 50V | 10V | ±20V |