- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,858
In-stock
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Infineon Technologies | MOSFET N-CH 80V 45A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 79W (Tc) | N-Channel | - | 80V | 45A (Tc) | 13.9 mOhm @ 45A, 10V | 3.5V @ 33µA | 25nC @ 10V | 1730pF @ 40V | 6V, 10V | ±20V | |||
|
VIEW |
2,253
In-stock
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Infineon Technologies | MOSFET N-CH 100V 9.7A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 48W (Tc) | N-Channel | - | 100V | 9.7A (Tc) | 200 mOhm @ 5.7A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,442
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 17A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | 3.7W (Ta), 60W (Tc) | N-Channel | - | 60V | 17A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,207
In-stock
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Infineon Technologies | MOSFET N-CH 100V 43A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 71W (Tc) | N-Channel | - | 100V | 43A (Tc) | 18 mOhm @ 33A, 10V | 3.5V @ 33µA | 25nC @ 10V | 1800pF @ 50V | 6V, 10V | ±20V | |||
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|
VIEW |
1,723
In-stock
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Infineon Technologies | MOSFET N-CH 100V 9.7A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 48W (Tc) | N-Channel | - | 100V | 9.7A (Tc) | 200 mOhm @ 5.7A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | |||
|
VIEW |
803
In-stock
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STMicroelectronics | MOSFET N-CH 100V 45A I2PAK | DeepGATE™, STripFET™ VII | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 60W (Tc) | N-Channel | - | 100V | 45A (Tc) | 18 mOhm @ 22.5A, 10V | 4.5V @ 250µA | 25nC @ 10V | 1640pF @ 50V | 10V | 20V | |||
