- Part Status :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
27 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | |||||||||||||||||||||||||
|
VIEW |
2,565
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 2.5A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 60V | 2.5A (Ta) | 100 mOhm @ 1.5A, 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,696
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 1A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 100V | 1A (Ta) | 540 mOhm @ 600mA, 5V | 2V @ 250µA | 6.1nC @ 5V | 250pF @ 25V | 4V, 5V | ±10V | |||
|
VIEW |
3,229
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 2.5A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 60V | 2.5A (Ta) | 100 mOhm @ 1.5A, 5V | 2V @ 250µA | 18nC @ 5V | 870pF @ 25V | 4V, 5V | ±10V | |||
|
VIEW |
2,875
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 1.7A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 60V | 1.7A (Ta) | 200 mOhm @ 1A, 5V | 2V @ 250µA | 8.4nC @ 5V | 400pF @ 25V | 4V, 5V | ±10V | |||
|
VIEW |
2,811
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 1.3A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 100V | 1.3A (Ta) | 270 mOhm @ 780mA, 5V | 2V @ 250µA | 12nC @ 5V | 490pF @ 25V | 4V, 5V | ±10V | |||
|
VIEW |
2,286
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 1.3A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 100V | 1.3A (Ta) | 270 mOhm @ 780mA, 10V | 4V @ 250µA | 16nC @ 10V | 360pF @ 25V | 10V | ±20V | |||
|
VIEW |
708
In-stock
|
Vishay Siliconix | MOSFET P-CH 100V 1A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | P-Channel | 100V | 1A (Ta) | 600 mOhm @ 600mA, 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,588
In-stock
|
Vishay Siliconix | MOSFET P-CH 100V 0.7A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | P-Channel | 100V | 700mA (Ta) | 1.2 Ohm @ 420mA, 10V | 4V @ 250µA | 8.7nC @ 10V | 200pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,086
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 1A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 100V | 1A (Ta) | 540 mOhm @ 600mA, 10V | 4V @ 250µA | 8.3nC @ 10V | 180pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,726
In-stock
|
Vishay Siliconix | MOSFET P-CH 100V 1A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | P-Channel | 100V | 1A (Ta) | 600 mOhm @ 600mA, 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,483
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 1A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 100V | 1A (Ta) | 540 mOhm @ 600mA, 5V | 2V @ 250µA | 6.1nC @ 5V | 250pF @ 25V | 4V, 5V | ±10V | |||
|
VIEW |
3,793
In-stock
|
Vishay Siliconix | MOSFET P-CH 60V 1.6A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | P-Channel | 60V | 1.6A (Ta) | 280 mOhm @ 960mA, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,912
In-stock
|
Vishay Siliconix | MOSFET P-CH 60V 1.6A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | P-Channel | 60V | 1.6A (Ta) | 280 mOhm @ 960mA, 10V | 4V @ 1µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,568
In-stock
|
Vishay Siliconix | MOSFET P-CH 60V 1.1A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | P-Channel | 60V | 1.1A (Ta) | 500 mOhm @ 660mA, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,834
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 1.7A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 60V | 1.7A (Ta) | 200 mOhm @ 1A, 10V | 4V @ 250µA | 11nC @ 10V | 310pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,519
In-stock
|
Vishay Siliconix | MOSFET P-CH 60V 1.1A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | P-Channel | 60V | 1.1A (Ta) | 500 mOhm @ 660mA, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,349
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 1.7A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 60V | 1.7A (Ta) | 200 mOhm @ 1A, 10V | 4V @ 250µA | 11nC @ 10V | 310pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,662
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 1A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 100V | 1A (Ta) | 540 mOhm @ 600mA, 10V | 4V @ 250µA | 8.3nC @ 10V | 180pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,078
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 1.3A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 100V | 1.3A (Ta) | 270 mOhm @ 780mA, 10V | 4V @ 250µA | 16nC @ 10V | 360pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,880
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 2.5A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 60V | 2.5A (Ta) | 100 mOhm @ 1.5A, 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | 10V | ±20V | |||
|
VIEW |
623
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 1.7A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 60V | 1.7A (Ta) | 200 mOhm @ 1A, 5V | 2V @ 250µA | 8.4nC @ 5V | 400pF @ 25V | 4V, 5V | ±10V | |||
|
VIEW |
1,186
In-stock
|
Vishay Siliconix | MOSFET P-CH 100V 0.7A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | P-Channel | 100V | 700mA (Ta) | 1.2 Ohm @ 420mA, 10V | 4V @ 250µA | 8.7nC @ 10V | 200pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,209
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 1.3A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 100V | 1.3A (Ta) | 270 mOhm @ 780mA, 10V | 4V @ 250µA | 16nC @ 10V | 360pF @ 25V | 10V | ±20V | |||
|
VIEW |
770
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 1.3A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 100V | 1.3A (Ta) | 270 mOhm @ 780mA, 5V | 2V @ 250µA | 12nC @ 5V | 490pF @ 25V | 4V, 5V | ±10V | |||
|
VIEW |
3,790
In-stock
|
Vishay Siliconix | MOSFET P-CH 60V 1.6A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | P-Channel | 60V | 1.6A (Ta) | 280 mOhm @ 960mA, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,486
In-stock
|
Vishay Siliconix | MOSFET P-CH 60V 1.6A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | P-Channel | 60V | 1.6A (Ta) | 280 mOhm @ 960mA, 10V | 4V @ 1µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | |||
|
VIEW |
750
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 2.5A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 60V | 2.5A (Ta) | 100 mOhm @ 1.5A, 5V | 2V @ 250µA | 18nC @ 5V | 870pF @ 25V | 4V, 5V | ±10V |