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- Power Dissipation (Max) :
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4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,365
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 2.6A PPAK SO-8 | TrenchFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 1.9W (Ta) | N-Channel | 200V | 2.6A (Ta) | 130 mOhm @ 4.1A, 10V | 4V @ 250µA | 30nC @ 10V | - | 6V, 10V | ±20V | |||
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|
VIEW |
3,005
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 2.6A PPAK SO-8 | TrenchFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 1.9W (Ta) | N-Channel | 200V | 2.6A (Ta) | 130 mOhm @ 4.1A, 10V | 4V @ 250µA | 30nC @ 10V | - | 6V, 10V | ±20V | |||
|
VIEW |
1,517
In-stock
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ON Semiconductor | MOSFET N-CH 100V 2.6A SSOT-6 | PowerTrench® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SuperSOT™-6 | 1.6W (Ta) | N-Channel | 100V | 2.6A (Ta) | 125 mOhm @ 2.6A, 10V | 4V @ 250µA | 20nC @ 10V | 660pF @ 50V | 6V, 10V | ±20V | |||
|
VIEW |
2,217
In-stock
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Diodes Incorporated | MOSFET P-CH 100V 2.6A SOT223 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta) | P-Channel | 100V | 2.6A (Ta) | 150 mOhm @ 2.8A, 10V | 4V @ 250µA | 26.9nC @ 10V | 1055pF @ 50V | 6V, 10V | ±20V | |||
