Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SI3441BDV-T1-E3
RFQ
VIEW
RFQ
1,295
In-stock
Vishay Siliconix MOSFET P-CH 20V 2.45A 6-TSOP TrenchFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 860mW (Ta) P-Channel 20V 2.45A (Ta) 90 mOhm @ 3.3A, 4.5V 850mV @ 250µA 8nC @ 4.5V - 2.5V, 4.5V ±8V
SI9424BDY-T1-E3
RFQ
VIEW
RFQ
1,490
In-stock
Vishay Siliconix MOSFET P-CH 20V 5.6A 8-SOIC TrenchFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.25W (Ta) P-Channel 20V 5.6A (Ta) 25 mOhm @ 7.1A, 4.5V 850mV @ 250µA 40nC @ 4.5V - 2.5V, 4.5V ±9V
SI2302CDS-T1-GE3
RFQ
VIEW
RFQ
1,086
In-stock
Vishay Siliconix MOSFET N-CH 20V 2.6A SOT23-3 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 710mW (Ta) N-Channel 20V 2.6A (Ta) 57 mOhm @ 3.6A, 4.5V 850mV @ 250µA 5.5nC @ 4.5V - 2.5V, 4.5V ±8V
SI2302CDS-T1-E3
RFQ
VIEW
RFQ
2,914
In-stock
Vishay Siliconix MOSFET N-CH 20V 2.6A SOT-23 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 710mW (Ta) N-Channel 20V 2.6A (Ta) 57 mOhm @ 3.6A, 4.5V 850mV @ 250µA 5.5nC @ 4.5V - 2.5V, 4.5V ±8V
SI2302DDS-T1-GE3
RFQ
VIEW
RFQ
3,652
In-stock
Vishay Siliconix MOSFET N-CHAN 20V SOT23 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 710mW (Ta) N-Channel 20V 2.9A (Tj) 57 mOhm @ 3.6A, 4.5V 850mV @ 250µA 5.5nC @ 4.5V - 2.5V, 4.5V ±8V