Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies MOSFET N-CH 200V 1.2A 8-SOIC HEXFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel 200V 1.2A (Ta) 730 mOhm @ 720mA, 10V 5.5V @ 250µA 14nC @ 10V 280pF @ 25V 10V ±30V
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Vishay Siliconix MOSFET N-CH 200V 5.2A D2PAK - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3W (Ta), 50W (Tc) N-Channel 200V 5.2A (Tc) 800 mOhm @ 3.1A, 10V 4V @ 250µA 14nC @ 10V 260pF @ 25V 10V ±20V
IRFR220TRPBF
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Vishay Siliconix MOSFET N-CH 200V 4.8A DPAK - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 42W (Tc) N-Channel 200V 4.8A (Tc) 800 mOhm @ 2.9A, 10V 4V @ 250µA 14nC @ 10V 260pF @ 25V 10V ±20V
IRFR220TRLPBF
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Vishay Siliconix MOSFET N-CH 200V 4.8A DPAK - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 42W (Tc) N-Channel 200V 4.8A (Tc) 800 mOhm @ 2.9A, 10V 4V @ 250µA 14nC @ 10V 260pF @ 25V 10V ±20V