Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FDS9431A-F085
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RFQ
2,956
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ON Semiconductor MOSFET P-CH 20V 8-SOIC Automotive, AEC-Q101 Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 20V 3.5A (Ta) 130 mOhm @ 3.5A, 4.5V 1V @ 250µA 8.5nC @ 4.5V 405pF @ 10V 2.5V, 4.5V ±8V
FDS9431A
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RFQ
1,772
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ON Semiconductor MOSFET P-CH 20V 3.5A 8SOIC - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 20V 3.5A (Ta) 130 mOhm @ 3.5A, 4.5V 1V @ 250µA 8.5nC @ 4.5V 405pF @ 10V 2.5V, 4.5V ±8V
SI2301CDS-T1-GE3
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RFQ
2,730
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Vishay Siliconix MOSFET P-CH 20V 3.1A SOT23-3 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 860mW (Ta), 1.6W (Tc) P-Channel - 20V 3.1A (Tc) 112 mOhm @ 2.8A, 4.5V 1V @ 250µA 10nC @ 4.5V 405pF @ 10V 2.5V, 4.5V ±8V
SI2301CDS-T1-E3
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RFQ
3,185
In-stock
Vishay Siliconix MOSFET P-CH 20V 3.1A SOT23-3 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 860mW (Ta), 1.6W (Tc) P-Channel - 20V 3.1A (Tc) 112 mOhm @ 2.8A, 4.5V 1V @ 250µA 10nC @ 4.5V 405pF @ 10V 2.5V, 4.5V ±8V