- Part Status :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
880
In-stock
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Infineon Technologies | MOSFET N-CH 60V 100A 5X6 PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.6W (Ta), 114W (Tc) | N-Channel | - | 60V | 21A (Ta), 100A (Tc) | 5.6 mOhm @ 50A, 10V | 4V @ 250µA | 75nC @ 10V | 3090pF @ 25V | 10V | ±20V | |||
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VIEW |
755
In-stock
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Infineon Technologies | MOSFET N-CH 60V 100A 5X6 PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.6W (Ta), 156W (Tc) | N-Channel | - | 60V | 21A (Ta), 100A (Tc) | 4.1 mOhm @ 50A, 10V | 4V @ 150µA | 100nC @ 10V | 4175pF @ 30V | 10V | ±20V | |||
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VIEW |
3,546
In-stock
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Infineon Technologies | MOSFET N-CH 60V 100A 8-PQFN | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.6W (Ta) | N-Channel | - | 60V | 21A (Ta), 100A (Tc) | 4.1 mOhm @ 50A, 10V | 4V @ 150µA | 100nC @ 10V | 4175pF @ 30V | 10V | ±20V |