- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,212
In-stock
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Infineon Technologies | MOSFET N-CH 200V 3.7A 8-SOIC | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 200V | 3.7A (Ta) | 79 mOhm @ 2.2A, 10V | 2.5V @ 250µA | 59nC @ 10V | 1820pF @ 25V | 10V | ±20V | |||
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VIEW |
2,074
In-stock
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Infineon Technologies | MOSFET N-CH 200V 3.8A PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (5x6) | 3.6W (Ta), 8.3W (Tc) | N-Channel | - | 200V | 3.8A (Ta), 20A (Tc) | 99.9 mOhm @ 5.8A, 10V | 5V @ 100µA | 30nC @ 10V | 1380pF @ 50V | 10V | ±20V | |||
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VIEW |
3,856
In-stock
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Infineon Technologies | MOSFET N-CH 200V 1.2A 8-SOIC | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 200V | 1.2A (Ta) | 730 mOhm @ 720mA, 10V | 5.5V @ 250µA | 14nC @ 10V | 280pF @ 25V | 10V | ±30V | |||
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VIEW |
881
In-stock
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Infineon Technologies | MOSFET N-CH 200V 5.1A 8PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta), 8.3W (Tc) | N-Channel | - | 200V | 5.1A (Ta) | 55 mOhm @ 7.5A, 10V | 5V @ 150µA | 54nC @ 10V | 2290pF @ 100V | 10V | ±20V | |||
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VIEW |
1,655
In-stock
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Infineon Technologies | MOSFET N-CH 200V 5.1A 8PQFN | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta) | N-Channel | - | 200V | 5.1A (Ta) | 55 mOhm @ 7.5A, 10V | 5V @ 150µA | 54nC @ 10V | 2290pF @ 100V | 10V | ±20V | |||
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VIEW |
2,925
In-stock
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Infineon Technologies | MOSFET N-CH 200V 2.5A 8-SOIC | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 200V | 2.5A (Ta) | 170 mOhm @ 1.5A, 10V | 5.5V @ 250µA | 39nC @ 10V | 940pF @ 25V | 10V | ±30V | |||
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VIEW |
626
In-stock
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Infineon Technologies | MOSFET N-CH 200V 600MA 6-TSOP | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | Micro6™(TSOP-6) | 2W (Ta) | N-Channel | - | 200V | 600mA (Ta) | 2.2 Ohm @ 360mA, 10V | 5.5V @ 250µA | 3.9nC @ 10V | 88pF @ 25V | 10V | ±30V | |||
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VIEW |
2,587
In-stock
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Infineon Technologies | MOSFET N CH 200V 3.7A 8-SO | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 200V | 3.7A (Ta) | 78 mOhm @ 2.2A, 10V | 5V @ 100µA | 44nC @ 10V | 1750pF @ 100V | 10V | ±20V | |||
