Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FCB11N60TM
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3,290
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ON Semiconductor MOSFET N-CH 600V 11A D2PAK SuperFET™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK 125W (Tc) N-Channel - 600V 11A (Tc) 380 mOhm @ 5.5A, 10V 5V @ 250µA 52nC @ 10V 1490pF @ 25V 10V ±30V
SIHD9N60E-GE3
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995
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Vishay Siliconix MOSFET N-CHANNEL 600V 9A DPAK E Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-PAK (TO-252AA) 78W (Tc) N-Channel - 600V 9A (Tc) 368 mOhm @ 4.5A, 10V 4.5V @ 250µA 52nC @ 10V 778pF @ 100V 10V ±30V
FCB11N60FTM
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RFQ
3,361
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ON Semiconductor MOSFET N-CH 600V 11A D2PAK SuperFET™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK 125W (Tc) N-Channel - 600V 11A (Tc) 380 mOhm @ 5.5A, 10V 5V @ 250µA 52nC @ 10V 1490pF @ 25V 10V ±30V
IPB60R165CPATMA1
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RFQ
3,144
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Infineon Technologies MOSFET N-CH 600V 21A D2PAK CoolMOS™ Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 192W (Tc) N-Channel - 600V 21A (Tc) 165 mOhm @ 12A, 10V 3.5V @ 790µA 52nC @ 10V 2000pF @ 100V 10V ±20V