- Manufacture :
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- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,195
In-stock
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Diodes Incorporated | MOSFET N-CHAN 41V 60V X1-DFN1006 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-UFDFN | X1-DFN1006-3 | 500mW (Ta) | N-Channel | 60V | 320mA (Ta) | 2 Ohm @ 100mA, 4V | 1V @ 250µA | 0.9nC @ 4.5V | 64pF @ 25V | 1.5V, 4V | ±20V | |||
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VIEW |
2,970
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.1A USM | π-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | USM | 150mW (Ta) | N-Channel | 20V | 100mA (Ta) | 3 Ohm @ 10mA, 4V | 1.1V @ 100µA | - | 9.3pF @ 3V | 1.5V, 4V | ±10V | |||
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VIEW |
2,332
In-stock
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Diodes Incorporated | MOSFET N-CH 60V X2-DFN1006-3 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-UFDFN | 3-X1DFN1006 | 470mW (Ta) | N-Channel | 60V | 100mA (Ta) | 2 Ohm @ 100mA, 4V | 1V @ 250µA | 0.45nC @ 4.5V | 32pF @ 25V | 1.5V, 4V | ±20V |