Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSP135L6433HTMA1
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Infineon Technologies MOSFET N-CH 600V 120MA SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel Depletion Mode 600V 120mA (Ta) 45 Ohm @ 120mA, 10V 1V @ 94µA 4.9nC @ 5V 146pF @ 25V 0V, 10V ±20V
BSP135L6906HTSA1
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2,656
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Infineon Technologies MOSFET N-CH 600V 120MA SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel Depletion Mode 600V 120mA (Ta) 45 Ohm @ 120mA, 10V 1V @ 94µA 4.9nC @ 5V 146pF @ 25V 0V, 10V ±20V
BSP135L6327HTSA1
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3,508
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Infineon Technologies MOSFET N-CH 600V 120MA SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel Depletion Mode 600V 120mA (Ta) 45 Ohm @ 120mA, 10V 1V @ 94µA 4.9nC @ 5V 146pF @ 25V 0V, 10V ±20V
BSP135 E6906
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845
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Infineon Technologies MOSFET N-CH 600V 120MA SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel Depletion Mode 600V 120mA (Ta) 45 Ohm @ 120mA, 10V 1V @ 94µA 4.9nC @ 5V 146pF @ 25V 0V, 10V ±20V
BSP135 E6327
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1,624
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Infineon Technologies MOSFET N-CH 600V 120MA SOT-223 SIPMOS® Discontinued at Digi-Key Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel Depletion Mode 600V 120mA (Ta) 45 Ohm @ 120mA, 10V 1V @ 94µA 4.9nC @ 5V 146pF @ 25V 0V, 10V ±20V
BSP135H6906XTSA1
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3,140
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Infineon Technologies MOSFET N-CH 600V 120MA SOT223 SIPMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel Depletion Mode 600V 120mA (Ta) 45 Ohm @ 120mA, 10V 1V @ 94µA 4.9nC @ 5V 146pF @ 25V 0V, 10V ±20V
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Infineon Technologies MOSFET N-CH 600V 120MA SOT223 SIPMOS® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1.8W (Ta) N-Channel Depletion Mode 600V 120mA (Ta) 45 Ohm @ 120mA, 10V 1V @ 94µA 4.9nC @ 5V 146pF @ 25V 0V, 10V ±20V
BSP135H6327XTSA1
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3,424
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Infineon Technologies MOSFET N-CH 600V 120MA SOT-223 SIPMOS® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 1.8W (Ta) N-Channel Depletion Mode 600V 120mA (Ta) 45 Ohm @ 120mA, 10V 1V @ 94µA 4.9nC @ 5V 146pF @ 25V 0V, 10V ±20V