- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,290
In-stock
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Infineon Technologies | MOSFET N-CH 20V 10A PQFN | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerVDFN | 6-PQFN (2x2) | 1.98W (Ta), 9.6W (Tc) | N-Channel | - | 20V | 10A (Ta), 12A (Tc) | 11.7 mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 14nC @ 4.5V | 1110pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
1,753
In-stock
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Infineon Technologies | MOSFET N-CH 30V 9.9A 8SOIC | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 9.9A (Ta) | 14.6 mOhm @ 9.9A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | 1025pF @ 25V | 2.5V, 4.5V | ±12V | |||
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VIEW |
3,146
In-stock
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Infineon Technologies | MOSFET N-CH 30V 8.7A PQFN | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerVDFN | 6-PQFN (2x2) | 2.1W (Ta) | N-Channel | - | 30V | 8.7A (Ta), 19A (Tc) | 15.5 mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | 1019pF @ 25V | 2.5V, 4.5V | ±12V | |||
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VIEW |
1,217
In-stock
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Infineon Technologies | MOSFET N-CH 30V 8.3A 6TSOP | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | 6-TSOP | 2W (Ta) | N-Channel | - | 30V | 8.3A (Ta) | 17.5 mOhm @ 8.3A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | 1010pF @ 25V | 2.5V, 4.5V | ±12V | |||
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864
In-stock
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Infineon Technologies | MOSFET N-CH 30V 5A SOT23 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.3W (Ta) | N-Channel | - | 30V | 5A (Ta) | 29 mOhm @ 5A, 4.5V | 1.1V @ 10µA | 6.8nC @ 4.5V | 650pF @ 25V | 2.5V, 4.5V | ±12V | |||
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VIEW |
3,934
In-stock
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Infineon Technologies | MOSFET N-CH 20V 6.3A SOT-23 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.3W (Ta) | N-Channel | - | 20V | 6.3A (Ta) | 21 mOhm @ 6.3A, 4.5V | 1.1V @ 10µA | 8.9nC @ 4.5V | 700pF @ 16V | 2.5V, 4.5V | ±12V | |||
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VIEW |
1,766
In-stock
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Infineon Technologies | MOSFET N-CH 30V 3.4A SOT23 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.3W (Ta) | N-Channel | - | 30V | 3.4A (Ta) | 63 mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 2.9nC @ 4.5V | 270pF @ 24V | 2.5V, 4.5V | ±12V |