Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSZ165N04NSGATMA1
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Infineon Technologies MOSFET N-CH 40V 31A TSDSON-8 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 25W (Tc) N-Channel - 40V 8.9A (Ta), 31A (Tc) 16.5 mOhm @ 20A, 10V 4V @ 10µA 10nC @ 10V 840pF @ 20V 10V ±20V
BSZ130N03MSGATMA1
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883
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Infineon Technologies MOSFET N-CH 30V 35A TSDSON-8 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 25W (Tc) N-Channel - 30V 9A (Ta), 35A (Tc) 11.5 mOhm @ 20A, 10V 2V @ 250µA 17nC @ 10V 1300pF @ 15V 4.5V, 10V ±20V
BSZ130N03LSGATMA1
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1,107
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Infineon Technologies MOSFET N-CH 30V 35A TSDSON-8 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 25W (Tc) N-Channel - 30V 10A (Ta), 35A (Tc) 13 mOhm @ 20A, 10V 2.2V @ 250µA 13nC @ 10V 970pF @ 15V 4.5V, 10V ±20V
BSZ0909NSATMA1
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744
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Infineon Technologies MOSFET N-CH 34V 9A 8TSDSON OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 25W (Tc) N-Channel - 34V 9A (Ta), 36A (Tc) 12 mOhm @ 20A, 10V 2V @ 250µA 17nC @ 10V 1310pF @ 15V 4.5V, 10V ±20V