Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF9620L
RFQ
VIEW
RFQ
1,999
In-stock
Vishay Siliconix MOSFET P-CH 200V 3.5A TO-262 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK - P-Channel 200V 3.5A (Tc) 1.5 Ohm @ 1.5A, 10V 4V @ 250µA 22nC @ 10V 350pF @ 25V 10V ±20V
IRF9620
RFQ
VIEW
RFQ
3,686
In-stock
Vishay Siliconix MOSFET P-CH 200V 3.5A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 40W (Tc) P-Channel 200V 3.5A (Tc) 1.5 Ohm @ 1.5A, 10V 4V @ 250µA 22nC @ 10V 350pF @ 25V 10V ±20V
IRF9620S
RFQ
VIEW
RFQ
2,351
In-stock
Vishay Siliconix MOSFET P-CH 200V 3.5A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3W (Ta), 40W (Tc) P-Channel 200V 3.5A (Tc) 1.5 Ohm @ 1.5A, 10V 4V @ 250µA 22nC @ 10V 350pF @ 25V 10V ±20V
IRF9620SPBF
RFQ
VIEW
RFQ
3,802
In-stock
Vishay Siliconix MOSFET P-CH 200V 3.5A D2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3W (Ta), 40W (Tc) P-Channel 200V 3.5A (Tc) 1.5 Ohm @ 1.5A, 10V 4V @ 250µA 22nC @ 10V 350pF @ 25V 10V ±20V
IRF9620PBF
RFQ
VIEW
RFQ
1,987
In-stock
Vishay Siliconix MOSFET P-CH 200V 3.5A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 40W (Tc) P-Channel 200V 3.5A (Tc) 1.5 Ohm @ 1.5A, 10V 4V @ 250µA 22nC @ 10V 350pF @ 25V 10V ±20V