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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,580
In-stock
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Infineon Technologies | MOSFET N CH 200V 3.7A 8-SO | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | 200V | 3.7A (Ta) | 78 mOhm @ 2.2A, 10V | 5V @ 100µA | 44nC @ 10V | 1750pF @ 100V | 10V | ±20V | |||
|
VIEW |
2,848
In-stock
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Infineon Technologies | MOSFET N-CH 200V 5.5A TO-220 | SIPMOS® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 40W (Tc) | N-Channel | 200V | 5.5A (Tc) | 600 mOhm @ 4.5A, 10V | 4V @ 1mA | - | 530pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,387
In-stock
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Infineon Technologies | MOSFET N-CH 200V 7A TO-220AB | SIPMOS® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 40W (Tc) | N-Channel | 200V | 7A (Tc) | 400 mOhm @ 4.5A, 10V | 4V @ 1mA | - | 530pF @ 25V | 10V | ±20V | |||
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VIEW |
1,093
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 0.96A SOT223 | - | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta), 3.1W (Tc) | N-Channel | 200V | 960mA (Tc) | 1.5 Ohm @ 580mA, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V |