Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF7521D1PBF
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Infineon Technologies MOSFET N-CH 20V 2.4A MICRO8 FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Micro8™ 1.3W (Ta) N-Channel Schottky Diode (Isolated) 20V 2.4A (Ta) 135 mOhm @ 1.7A, 4.5V 700mV @ 250µA 8nC @ 4.5V 260pF @ 15V 2.7V, 4.5V ±12V
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Infineon Technologies MOSFET P-CH 20V 2.2A 8-SOIC FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2W (Ta) P-Channel Schottky Diode (Isolated) 20V 2.2A (Ta) 270 mOhm @ 1.2A, 4.5V 700mV @ 250µA 7.8nC @ 4.5V 260pF @ 15V 2.7V, 4.5V ±12V
IRF7521D1
RFQ
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RFQ
3,846
In-stock
Infineon Technologies MOSFET N-CH 20V 2.4A MICRO-8 FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Micro8™ 1.3W (Ta) N-Channel Schottky Diode (Isolated) 20V 2.4A (Ta) 135 mOhm @ 1.7A, 4.5V 700mV @ 250µA 8nC @ 4.5V 260pF @ 15V 2.7V, 4.5V ±12V
IRF7324D1
RFQ
VIEW
RFQ
1,382
In-stock
Infineon Technologies MOSFET P-CH 20V 2.2A 8-SOIC FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2W (Ta) P-Channel Schottky Diode (Isolated) 20V 2.2A (Ta) 270 mOhm @ 1.2A, 4.5V 700mV @ 250µA 7.8nC @ 4.5V 260pF @ 15V 2.7V, 4.5V ±12V