Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF634L
RFQ
VIEW
RFQ
2,477
In-stock
Vishay Siliconix MOSFET N-CH 250V 8.1A TO-262 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK - N-Channel 250V 8.1A (Tc) 450 mOhm @ 5.1A, 10V 4V @ 250µA 41nC @ 10V 770pF @ 25V 10V ±20V
IRF634S
RFQ
VIEW
RFQ
825
In-stock
Vishay Siliconix MOSFET N-CH 250V 8.1A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 74W (Tc) N-Channel 250V 8.1A (Tc) 450 mOhm @ 5.1A, 10V 4V @ 250µA 41nC @ 10V 770pF @ 25V 10V ±20V
IRF634
RFQ
VIEW
RFQ
2,516
In-stock
Vishay Siliconix MOSFET N-CH 250V 8.1A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 74W (Tc) N-Channel 250V 8.1A (Tc) 450 mOhm @ 5.1A, 10V 4V @ 250µA 41nC @ 10V 770pF @ 25V 10V ±20V
IRF634SPBF
RFQ
VIEW
RFQ
3,402
In-stock
Vishay Siliconix MOSFET N-CH 250V 8.1A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 74W (Tc) N-Channel 250V 8.1A (Tc) 450 mOhm @ 5.1A, 10V 4V @ 250µA 41nC @ 10V 770pF @ 25V 10V ±20V
IRFI634G
RFQ
VIEW
RFQ
3,807
In-stock
Vishay Siliconix MOSFET N-CH 250V 5.6A TO220FP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 35W (Tc) N-Channel 250V 5.6A (Tc) 450 mOhm @ 3.4A, 10V 4V @ 250µA 41nC @ 10V 770pF @ 25V 10V ±20V
IRFI634GPBF
RFQ
VIEW
RFQ
1,406
In-stock
Vishay Siliconix MOSFET N-CH 250V 5.6A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 35W (Tc) N-Channel 250V 5.6A (Tc) 450 mOhm @ 3.4A, 10V 4V @ 250µA 41nC @ 10V 770pF @ 25V 10V ±20V
TSM8N80CI C0G
RFQ
VIEW
RFQ
3,016
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 800V 8A ITO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 40.3W (Tc) N-Channel 800V 8A (Tc) 1.05 Ohm @ 4A, 10V 4V @ 250µA 41nC @ 10V 1921pF @ 25V 10V ±30V
TSM8N80CZ C0G
RFQ
VIEW
RFQ
1,361
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 800V 8A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 40.3W (Tc) N-Channel 800V 8A (Tc) 1.05 Ohm @ 4A, 10V 4V @ 250µA 41nC @ 10V 1921pF @ 25V 10V ±30V
IXTT1N250HV
RFQ
VIEW
RFQ
748
In-stock
IXYS MOSFET N-CH 2500V 1.5A TO-268HV - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 250W (Tc) N-Channel 2500V 1.5A (Tc) 40 Ohm @ 750mA, 10V 4V @ 250µA 41nC @ 10V 1660pF @ 25V 10V ±20V
IRF634PBF
RFQ
VIEW
RFQ
2,614
In-stock
Vishay Siliconix MOSFET N-CH 250V 8.1A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 74W (Tc) N-Channel 250V 8.1A (Tc) 450 mOhm @ 5.1A, 10V 4V @ 250µA 41nC @ 10V 770pF @ 25V 10V ±20V