Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
NTP8G206NG
RFQ
VIEW
RFQ
1,075
In-stock
ON Semiconductor MOSFET N-CH 600V 17A TO220 - Last Time Buy Tube GaNFET (Gallium Nitride) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 96W (Tc) N-Channel 600V 17A (Tc) 180 mOhm @ 11A, 8V 2.6V @ 500µA 9.3nC @ 4.5V 760pF @ 480V 8V ±18V
NTP8G202NG
RFQ
VIEW
RFQ
1,719
In-stock
ON Semiconductor MOSFET N-CH 600V 9A TO220 - Last Time Buy Tube GaNFET (Gallium Nitride) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 65W (Tc) N-Channel 600V 9A (Tc) 350 mOhm @ 5.5A, 8V 2.6V @ 500µA 9.3nC @ 4.5V 760pF @ 400V 8V ±18V
TPH3206LDGB
RFQ
VIEW
RFQ
2,623
In-stock
Transphorm MOSFET N-CH 650V 16A PQFN - Active Tube GaNFET (Gallium Nitride) -55°C ~ 150°C (TJ) Surface Mount 3-PowerDFN PQFN (8x8) 81W (Tc) N-Channel 650V 16A (Tc) 180 mOhm @ 11A, 8V 2.6V @ 500µA 9.3nC @ 4.5V 760pF @ 480V 8V ±18V