Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTH10P50P
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RFQ
2,326
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IXYS MOSFET P-CH 500V 10A TO-247 PolarP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 300W (Tc) P-Channel - 500V 10A (Tc) 1 Ohm @ 5A, 10V 4V @ 250µA 50nC @ 10V 2840pF @ 25V 10V ±20V
IXTQ10P50P
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VIEW
RFQ
2,872
In-stock
IXYS MOSFET P-CH 500V 10A TO-3P PolarP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 300W (Tc) P-Channel - 500V 10A (Tc) 1 Ohm @ 5A, 10V 4V @ 250µA 50nC @ 10V 2840pF @ 25V 10V ±20V
IXTA10P50P
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RFQ
2,575
In-stock
IXYS MOSFET P-CH 500V 10A TO-263 PolarP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 300W (Tc) P-Channel - 500V 10A (Tc) 1 Ohm @ 5A, 10V 4V @ 250µA 50nC @ 10V 2840pF @ 25V 10V ±20V
IXTP10P50P
RFQ
VIEW
RFQ
2,449
In-stock
IXYS MOSFET P-CH 500V 10A TO-220 PolarP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 300W (Tc) P-Channel - 500V 10A (Tc) 1 Ohm @ 5A, 10V 4V @ 250µA 50nC @ 10V 2840pF @ 25V 10V ±20V