Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTQ480P2
RFQ
VIEW
RFQ
2,098
In-stock
IXYS MOSFET N-CH 500V 52A TO3P PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 960W (Tc) N-Channel - 500V 52A (Tc) 120 mOhm @ 26A, 10V 4.5V @ 250µA 108nC @ 10V 6800pF @ 25V 10V ±30V
IXFN64N50PD2
RFQ
VIEW
RFQ
2,850
In-stock
IXYS MOSFET N-CH 500V 52A SOT-227B PolarHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 625W (Tc) N-Channel - 500V 52A (Tc) 85 mOhm @ 32A, 10V 5V @ 8mA 186nC @ 10V 11000pF @ 25V 10V ±30V
IXFT52N50P2
RFQ
VIEW
RFQ
2,599
In-stock
IXYS MOSFET N-CH 500V 52A TO268 HiPerFET™, PolarHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 960W (Tc) N-Channel - 500V 52A (Tc) 120 mOhm @ 26A, 10V 4.5V @ 4mA 113nC @ 10V 6800pF @ 25V 10V ±30V
APL502J
RFQ
VIEW
RFQ
1,656
In-stock
Microsemi Corporation MOSFET N-CH 500V 52A SOT-227 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 568W (Tc) N-Channel - 500V 52A (Tc) 90 mOhm @ 26A, 12V 4V @ 2.5mA - 9000pF @ 25V 15V ±30V
IXFH52N50P2
RFQ
VIEW
RFQ
725
In-stock
IXYS MOSFET N-CH 500V 52A TO247 HiPerFET™, PolarHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 960W (Tc) N-Channel - 500V 52A (Tc) 120 mOhm @ 26A, 10V 4.5V @ 4mA 113nC @ 10V 6800pF @ 25V 10V ±30V