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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	APT84F50B2	RFQ VIEW	PDF RFQ	3,386 In-stock	Microsemi Corporation	MOSFET N-CH 500V 84A TO-247		POWER MOS 8™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3 Variant	T-MAX™ [B2]	1135W (Tc)	N-Channel	-	500V	84A (Tc)	65 mOhm @ 42A, 10V	5V @ 2.5mA	340nC @ 10V	13500pF @ 25V	10V	±30V
	APT84M50B2	RFQ VIEW	PDF RFQ	2,084 In-stock	Microsemi Corporation	MOSFET N-CH 500V 84A T-MAX		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3 Variant	T-MAX™ [B2]	1135W (Tc)	N-Channel	-	500V	84A (Tc)	65 mOhm @ 42A, 10V	5V @ 2.5mA	340nC @ 10V	13500pF @ 25V	10V	±30V
	APT75M50B2	RFQ VIEW	PDF RFQ	2,684 In-stock	Microsemi Corporation	MOSFET N-CH 500V 75A T-MAX		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3 Variant	T-MAX™	1040W (Tc)	N-Channel	-	500V	75A (Tc)	75 mOhm @ 37A, 10V	5V @ 2.5mA	290nC @ 10V	11600pF @ 25V	10V	±30V
	APL502B2G	RFQ VIEW	PDF RFQ	3,363 In-stock	Microsemi Corporation	MOSFET N-CH 500V 58A T-MAX		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3 Variant	T-MAX™ [B2]	730W (Tc)	N-Channel	-	500V	58A (Tc)	90 mOhm @ 29A, 12V	4V @ 2.5mA	-	9000pF @ 25V	15V	±30V
	APT50M65B2LLG	RFQ VIEW	PDF RFQ	607 In-stock	Microsemi Corporation	MOSFET N-CH 500V 67A T-MAX		POWER MOS 7®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3 Variant	T-MAX™ [B2]	694W (Tc)	N-Channel	-	500V	67A (Tc)	65 mOhm @ 33.5A, 10V	5V @ 2.5mA	141nC @ 10V	7010pF @ 25V	10V	±30V
	APT56F50B2	RFQ VIEW	PDF RFQ	2,810 In-stock	Microsemi Corporation	MOSFET N-CH 500V 56A TO-247		POWER MOS 8™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3 Variant	T-MAX™ [B2]	780W (Tc)	N-Channel	-	500V	56A (Tc)	100 mOhm @ 28A, 10V	5V @ 2.5mA	220nC @ 10V	8800pF @ 25V	10V	±30V
	APT5010B2FLLG	RFQ VIEW	PDF RFQ	3,466 In-stock	Microsemi Corporation	MOSFET N-CH 500V 46A T-MAX		POWER MOS 7®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3 Variant	T-MAX™ [B2]	520W (Tc)	N-Channel	-	500V	46A (Tc)	100 mOhm @ 23A, 10V	5V @ 2.5mA	95nC @ 10V	4360pF @ 25V	10V	±30V
	APT50M65B2FLLG	RFQ VIEW	PDF RFQ	740 In-stock	Microsemi Corporation	MOSFET N-CH 500V 67A T-MAX		POWER MOS 7®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3 Variant	T-MAX™ [B2]	694W (Tc)	N-Channel	-	500V	67A (Tc)	65 mOhm @ 33.5A, 10V	5V @ 2.5mA	141nC @ 10V	7010pF @ 25V	10V	±30V
	APT56M50B2	RFQ VIEW	PDF RFQ	2,460 In-stock	Microsemi Corporation	MOSFET N-CH 500V 56A T-MAX		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3 Variant	T-MAX™	780W (Tc)	N-Channel	-	500V	56A (Tc)	100 mOhm @ 28A, 10V	5V @ 2.5mA	220nC @ 10V	8800pF @ 25V	10V	±30V
	APT5010B2LLG	RFQ VIEW	PDF RFQ	1,006 In-stock	Microsemi Corporation	MOSFET N-CH 500V 46A T-MAX		POWER MOS 7®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3 Variant	T-MAX™ [B2]	520W (Tc)	N-Channel	-	500V	46A (Tc)	100 mOhm @ 23A, 10V	5V @ 2.5mA	95nC @ 10V	4360pF @ 25V	10V	±30V
	APT75F50B2	RFQ VIEW	PDF RFQ	3,849 In-stock	Microsemi Corporation	MOSFET N-CH 500V 75A TO-247		POWER MOS 8™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3 Variant	T-MAX™ [B2]	1040W (Tc)	N-Channel	-	500V	75A (Tc)	75 mOhm @ 37A, 10V	5V @ 2.5mA	290nC @ 10V	11600pF @ 25V	10V	±30V

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