- Manufacture :
- Series :
- Part Status :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
1,420
In-stock
|
IXYS | MOSFET P-CH 100V 18A TO-263 | TrenchP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 83W (Tc) | P-Channel | - | 100V | 18A (Tc) | 120 mOhm @ 9A, 10V | 4.5V @ 250µA | 39nC @ 10V | 2100pF @ 25V | 10V | ±15V | ||||
VIEW |
1,856
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 8.3A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 100V | 8.3A (Ta) | 18 mOhm @ 8.3A, 10V | 4.9V @ 100µA | 39nC @ 10V | 1640pF @ 25V | 10V | ±20V | ||||
VIEW |
1,843
In-stock
|
IXYS | MOSFET P-CH 100V 18A TO-252 | TrenchP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 83W (Tc) | P-Channel | - | 100V | 18A (Tc) | 120 mOhm @ 9A, 10V | 4.5V @ 250µA | 39nC @ 10V | 2100pF @ 25V | 10V | ±15V | ||||
VIEW |
1,613
In-stock
|
IXYS | MOSFET P-CH 100V 18A TO-220 | TrenchP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 83W (Tc) | P-Channel | - | 100V | 18A (Tc) | 120 mOhm @ 9A, 10V | 4.5V @ 250µA | 39nC @ 10V | 2100pF @ 25V | 10V | ±15V |