Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FDP39N20
RFQ
VIEW
RFQ
2,118
In-stock
ON Semiconductor MOSFET N-CH 200V 39A TO-220 UniFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 251W (Tc) N-Channel - 200V 39A (Tc) 66 mOhm @ 19.5A, 10V 5V @ 250µA 49nC @ 10V 2130pF @ 25V 10V ±30V
FQP3P20
RFQ
VIEW
RFQ
2,634
In-stock
ON Semiconductor MOSFET P-CH 200V 2.8A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 52W (Tc) P-Channel - 200V 2.8A (Tc) 2.7 Ohm @ 1.4A, 10V 5V @ 250µA 8nC @ 10V 250pF @ 25V 10V ±30V
FDP18N20F
RFQ
VIEW
RFQ
1,931
In-stock
ON Semiconductor MOSFET N-CH 200V 18A TO-220 UniFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel - 200V 18A (Tc) 145 mOhm @ 9A, 10V 5V @ 250µA 26nC @ 10V 1180pF @ 25V 10V ±30V
FQP34N20
RFQ
VIEW
RFQ
1,680
In-stock
ON Semiconductor MOSFET N-CH 200V 31A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 180W (Tc) N-Channel - 200V 31A (Tc) 75 mOhm @ 15.5A, 10V 5V @ 250µA 78nC @ 10V 3100pF @ 25V 10V ±30V