- Manufacture :
- Series :
- Part Status :
- Mounting Type :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,328
In-stock
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IXYS | MOSFET N-CH 200V 100A SOT-227B | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 520W (Tc) | N-Channel | - | 200V | 100A (Tc) | 23 mOhm @ 500mA, 10V | 4V @ 8mA | 380nC @ 10V | 9000pF @ 25V | 10V | ±20V | |||
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VIEW |
717
In-stock
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Microsemi Corporation | MOSFET N-CH 200V 100A TO-264 | POWER MOS V® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 [L] | 520W (Tc) | N-Channel | - | 200V | 100A (Tc) | 22 mOhm @ 500mA, 10V | 4V @ 2.5mA | 435nC @ 10V | 10200pF @ 25V | 10V | ±30V | |||
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VIEW |
1,500
In-stock
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Microsemi Corporation | MOSFET N-CH 200V 100A T-MAX | POWER MOS V® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 520W (Tc) | N-Channel | - | 200V | 100A (Tc) | 22 mOhm @ 500mA, 10V | 4V @ 2.5mA | 435nC @ 10V | 10200pF @ 25V | 10V | ±30V | |||
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VIEW |
1,062
In-stock
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Microsemi Corporation | MOSFET N-CH 200V 100A T-MAX | POWER MOS V® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 520W (Tc) | N-Channel | - | 200V | 100A (Tc) | 22 mOhm @ 500mA, 10V | 4V @ 2.5mA | 435nC @ 10V | 10200pF @ 25V | 10V | ±30V | |||
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VIEW |
881
In-stock
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IXYS | MOSFET N-CH 200V 80A TO-247 | Linear™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 520W (Tc) | N-Channel | - | 200V | 80A (Tc) | 32 mOhm @ 40A, 10V | 4V @ 250µA | 180nC @ 10V | 6160pF @ 25V | 10V | ±20V | |||
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VIEW |
3,208
In-stock
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Microsemi Corporation | MOSFET N-CH 200V 100A TO-264 | POWER MOS V® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 [L] | 520W (Tc) | N-Channel | - | 200V | 100A (Tc) | 22 mOhm @ 500mA, 10V | 4V @ 2.5mA | 435nC @ 10V | 10200pF @ 25V | 10V | ±30V | |||
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VIEW |
3,353
In-stock
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IXYS | MOSFET N-CH 200V 80A TO-268 | Linear™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | 520W (Tc) | N-Channel | - | 200V | 80A (Tc) | 32 mOhm @ 40A, 10V | 4V @ 250µA | 180nC @ 10V | 6160pF @ 25V | 10V | ±20V |