- Manufacture :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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5 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
709
In-stock
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STMicroelectronics | MOSFET N-CH 650V 29A TO-220FP | MDmesh™ V | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 35W (Tc) | N-Channel | - | 650V | 28A (Tc) | 110 mOhm @ 14.5A, 10V | 5V @ 250µA | 70nC @ 10V | 2590pF @ 100V | 10V | ±25V | |||
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VIEW |
1,949
In-stock
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STMicroelectronics | MOSFET N-CH 650V 28A I2PAK | MDmesh™ V | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | I2PAKFP (TO-281) | 190W (Tc) | N-Channel | - | 650V | 28A (Tc) | 110 mOhm @ 14A, 10V | 5V @ 250µA | 62.5nC @ 10V | 2700pF @ 100V | 10V | ±25V | |||
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VIEW |
905
In-stock
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Vishay Siliconix | MOSFET N-CH 650V 28A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 250W (Tc) | N-Channel | - | 650V | 28A (Tc) | 117 mOhm @ 14A, 10V | 4V @ 250µA | 146nC @ 10V | 3249pF @ 100V | 10V | ±30V | |||
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VIEW |
3,909
In-stock
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Vishay Siliconix | MOSFET N-CH 650V 28A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 250W (Tc) | N-Channel | - | 650V | 28A (Tc) | 117 mOhm @ 14A, 10V | 4V @ 250µA | 146nC @ 10V | 3249pF @ 100V | 10V | ±30V | |||
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VIEW |
2,823
In-stock
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STMicroelectronics | MOSFET N-CH 650V 28A | Automotive, AEC-Q101, MDmesh™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 300W (Tc) | N-Channel | - | 650V | 28A (Tc) | 87 mOhm @ 19A, 10V | 5V @ 250µA | 70nC @ 10V | 3200pF @ 100V | 10V | ±25V |