- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,249
In-stock
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STMicroelectronics | MOSFET N-CH 650V 48A | Automotive, AEC-Q101, MDmesh™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 360W (Tc) | N-Channel | - | 650V | 48A (Tc) | 65 mOhm @ 24A, 10V | 5V @ 250µA | 88nC @ 10V | 4100pF @ 100V | 10V | ±25V | |||
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1,987
In-stock
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STMicroelectronics | MOSFET N-CH 650V 60A | Automotive, AEC-Q101, MDmesh™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 446W (Tc) | N-Channel | - | 650V | 60A (Tc) | 50 mOhm @ 30A, 10V | 5V @ 250µA | 120nC @ 10V | 5500pF @ 100V | 10V | ±25V | |||
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VIEW |
2,823
In-stock
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STMicroelectronics | MOSFET N-CH 650V 28A | Automotive, AEC-Q101, MDmesh™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 300W (Tc) | N-Channel | - | 650V | 28A (Tc) | 87 mOhm @ 19A, 10V | 5V @ 250µA | 70nC @ 10V | 3200pF @ 100V | 10V | ±25V |