Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPW90R1K0C3FKSA1
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640
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Infineon Technologies MOSFET N-CH 900V 5.7A TO-247 CoolMOS™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 89W (Tc) N-Channel - 900V 5.7A (Tc) 1 Ohm @ 3.3A, 10V 3.5V @ 370µA 34nC @ 10V 850pF @ 100V 10V ±20V
NDD60N900U1-35G
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1,367
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ON Semiconductor MOSFET N-CH 600V 5.9A IPAK-3 - Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 74W (Tc) N-Channel - 600V 5.7A (Tc) 900 mOhm @ 2.5A, 10V 4V @ 250µA 12nC @ 10V 360pF @ 50V 10V ±25V
NDD60N900U1-1G
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RFQ
2,356
In-stock
ON Semiconductor MOSFET N-CH 600V 5.9A IPAK-4 - Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 74W (Tc) N-Channel - 600V 5.7A (Tc) 900 mOhm @ 2.5A, 10V 4V @ 250µA 12nC @ 10V 360pF @ 50V 10V ±25V
IPP60R750E6XKSA1
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RFQ
3,966
In-stock
Infineon Technologies MOSFET N-CH 600V 5.7A TO220 CoolMOS™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 48W (Tc) N-Channel - 600V 5.7A (Tc) 750 mOhm @ 2A, 10V 3.5V @ 170µA 17.2nC @ 10V 373pF @ 100V 10V ±20V