Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFB40N110P
RFQ
VIEW
RFQ
765
In-stock
IXYS MOSFET N-CH 1100V 40A PLUS264 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA PLUS264™ 1250W (Tc) N-Channel - 1100V 40A (Tc) 260 mOhm @ 20A, 10V 6.5V @ 1mA 310nC @ 10V 19000pF @ 25V 10V ±30V
IXFB52N90P
RFQ
VIEW
RFQ
1,303
In-stock
IXYS MOSFET N-CH TO-264 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA PLUS264™ 1250W (Tc) N-Channel - 900V 52A (Tc) 160 mOhm @ 26A, 10V 6.5V @ 1mA 308nC @ 10V 19000pF @ 25V 10V ±30V
IXFB44N100P
RFQ
VIEW
RFQ
1,718
In-stock
IXYS MOSFET N-CH 1000V 44A PLUS264 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA PLUS264™ 1250W (Tc) N-Channel - 1000V 44A (Tc) 220 mOhm @ 22A, 10V 6.5V @ 1mA 305nC @ 10V 19000pF @ 25V 10V ±30V
IXFB82N60P
RFQ
VIEW
RFQ
1,034
In-stock
IXYS MOSFET N-CH 600V 82A PLUS 264 HiPerFET™, PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA PLUS264™ 1250W (Tc) N-Channel - 600V 82A (Tc) 75 mOhm @ 41A, 10V 5V @ 8mA 240nC @ 10V 23000pF @ 25V 10V ±30V
IXFB60N80P
RFQ
VIEW
RFQ
1,564
In-stock
IXYS MOSFET N-CH 800V 60A PLUS264 HiPerFET™, PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA PLUS264™ 1250W (Tc) N-Channel - 800V 60A (Tc) 140 mOhm @ 30A, 10V 5V @ 8mA 250nC @ 10V 18000pF @ 25V 10V ±30V