- Manufacture :
- Part Status :
- Package / Case :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
860
In-stock
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Diodes Incorporated | MOSFET P-CH 20V 6A TSOT26 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 | 1.2W (Ta) | P-Channel | - | 20V | 6A (Ta) | 35 mOhm @ 4A, 4.5V | 1.5V @ 250µA | 23.1nC @ 4.5V | 2400pF @ 10V | 1.8V, 4.5V | ±12V | |||
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VIEW |
2,387
In-stock
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Diodes Incorporated | MOSFET P-CH 20V 4.2A TSOT-26 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 | 1.2W (Ta) | P-Channel | - | 20V | 4.2A (Ta) | 65 mOhm @ 4.2A, 4.5V | 900mV @ 250µA | 10.4nC @ 4.5V | 845pF @ 15V | 1.8V, 4.5V | ±8V | |||
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VIEW |
979
In-stock
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Texas Instruments | MOSFET N-CH 12V 1.6A 4DSBGA | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA, DSBGA | 4-DSBGA (1x1) | 1.2W (Ta) | N-Channel | - | 12V | 1.6A (Ta) | 34 mOhm @ 1A, 4.5V | 1.1V @ 250µA | 2.9nC @ 4.5V | 462pF @ 6V | 1.8V, 4.5V | ±8V |