Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FDMT800100DC
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2,814
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ON Semiconductor MOSFET N-CH 100V 24A Dual Cool™, PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 8-Dual Cool™88 3.2W (Ta), 156W (Tc) N-Channel - 100V 24A (Ta), 162A (Tc) 2.95 mOhm @ 24A, 10V 4V @ 250µA 111nC @ 10V 7835pF @ 50V 6V, 10V ±20V
IRFH8201TRPBF
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979
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Infineon Technologies MOSFET N-CH 25V 100A PQFN HEXFET®, StrongIRFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (5x6) 3.6W (Ta), 156W (Tc) N-Channel - 25V 49A (Ta), 100A (Tc) 0.95 mOhm @ 50A, 10V 2.35V @ 150µA 111nC @ 10V 7330pF @ 13V 4.5V, 10V ±20V
SIRC18DP-T1-GE3
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2,832
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Vishay Siliconix MOSFET N-CH 30V 60A POWERPAKSO-8 TrenchFET® Gen IV Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 54.3W (Tc) N-Channel Schottky Diode (Body) 30V 60A (Tc) 1.1 mOhm @ 15A, 10V 2.4V @ 250µA 111nC @ 10V 5060pF @ 15V 4.5V, 10V +20V, -16V