Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SIJA54DP-T1-GE3
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Vishay Siliconix MOSFET N-CH 40V 60A PPAK SO-8L TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 36.7W (Tc) N-Channel - 40V 60A (Tc) 2.35 mOhm @ 15A, 10V 2.4V @ 250µA 104nC @ 10V 5300pF @ 20V 4.5V, 10V +20V, -16V
TSM038N04LCP ROG
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3,158
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 40V 135A TO252 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 125W (Tc) N-Channel - 40V 135A (Tc) 3.8 mOhm @ 19A, 10V 2.5V @ 250µA 104nC @ 10V 5509pF @ 20V 4.5V, 10V ±20V
BSC082N10LSGATMA1
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3,842
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Infineon Technologies MOSFET N-CH 100V 100A 8TDSON OptiMOS™ Not For New Designs Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 156W (Tc) N-Channel - 100V 13.8A (Ta), 100A (Tc) 8.2 mOhm @ 100A, 10V 2.4V @ 110µA 104nC @ 10V 7400pF @ 50V 4.5V, 10V ±20V