- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
3,028
In-stock
|
Infineon Technologies | MOSFET P-CH 60V 2.9A SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 60V | 2.9A (Ta) | 130 mOhm @ 2.9A, 10V | 4V @ 1mA | 33nC @ 10V | 875pF @ 25V | 10V | ±20V | ||||
VIEW |
2,452
In-stock
|
STMicroelectronics | MOSFET N-CH 800V 16A | MDmesh™ K5 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 190W (Tc) | N-Channel | - | 800V | 16A (Tc) | 280 mOhm @ 8A, 10V | 5V @ 100µA | 33nC @ 10V | 1000pF @ 100V | 10V | ±30V | ||||
VIEW |
3,800
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 50A TDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 50W (Tc) | N-Channel | - | 60V | 50A (Tc) | 11 mOhm @ 50A, 10V | 4V @ 23µA | 33nC @ 10V | 2700pF @ 30V | 10V | ±20V | ||||
VIEW |
2,624
In-stock
|
ON Semiconductor | SUPERFET3 650V PQFN88 | SuperFET® III | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | Power88 | 139W (Tc) | N-Channel | - | 650V | 17A (Tc) | 180 mOhm @ 8.5A, 10V | 4.5V @ 1.8mA | 33nC @ 10V | 1350pF @ 400V | 10V | ±30V | ||||
VIEW |
2,734
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 20A TSDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TSDSON-8 | 2.1W (Ta), 50W (Tc) | N-Channel | - | 60V | 20A (Tc) | 11 mOhm @ 20A, 10V | 4V @ 23µA | 33nC @ 10V | 2700pF @ 30V | 10V | ±20V | ||||
VIEW |
2,962
In-stock
|
Infineon Technologies | MOSFET P-CH 60V 2.9A SOT-223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 60V | 2.9A (Ta) | 130 mOhm @ 2.9A, 10V | 4V @ 1mA | 33nC @ 10V | 875pF @ 25V | 10V | ±20V |