- Series :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,757
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CH 1000V 1.85A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 77W (Tc) | N-Channel | - | 1000V | 1.85A (Tc) | 8.5 Ohm @ 900mA, 10V | 5.5V @ 250µA | 17nC @ 10V | 625pF @ 25V | 10V | ±30V | |||
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VIEW |
2,622
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 21.4A TO-252 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 5.7W (Ta), 31.25W (Tc) | N-Channel | - | 60V | 21.4A (Tc) | 31 mOhm @ 15A, 10V | 3V @ 250µA | 17nC @ 10V | 670pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,656
In-stock
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ON Semiconductor | MOSFET N-CH 600V 4.5A TO-252-3 | SuperFET® II | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 52W (Tc) | N-Channel | - | 600V | 4.5A (Tc) | 900 mOhm @ 2.3A, 10V | 3.5V @ 250µA | 17nC @ 10V | 720pF @ 25V | 10V | ±20V |