Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPD50R380CEATMA1
RFQ
VIEW
RFQ
1,743
In-stock
Infineon Technologies MOSFET N CH 500V 9.9A PG-TO252 CoolMOS™ CE Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 98W (Tc) N-Channel - 500V 9.9A (Tc) 380 mOhm @ 3.2A, 13V 3.5V @ 260µA 24.8nC @ 10V 584pF @ 100V 13V ±20V
IPD50R380CEBTMA1
RFQ
VIEW
RFQ
2,550
In-stock
Infineon Technologies MOSFET N CH 500V 9.9A PG-TO252 CoolMOS™ Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 73W (Tc) N-Channel Super Junction 500V 9.9A (Tc) 380 mOhm @ 3.2A, 13V 3.5V @ 260µA 24.8nC @ 10V 584pF @ 100V 13V ±20V
IRFR9020TRPBF
RFQ
VIEW
RFQ
3,832
In-stock
Vishay Siliconix MOSFET P-CH 50V 9.9A DPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 42W (Tc) P-Channel - 50V 9.9A (Tc) 280 mOhm @ 5.7A, 10V 4V @ 250µA 14nC @ 10V 490pF @ 25V 10V ±20V