- Manufacture :
- Series :
- Packaging :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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5 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,687
In-stock
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IXYS | MOSFET P-CH 200V 24A TO-268 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | 300W (Tc) | P-Channel | 200V | 24A (Tc) | 110 mOhm @ 500mA, 10V | 5V @ 250µA | 150nC @ 10V | 4200pF @ 25V | 10V | ±20V | |||
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VIEW |
988
In-stock
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Infineon Technologies | MOSFET N-CH 200V 24A TDSON-8 | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 96W (Tc) | N-Channel | 200V | 24A (Tc) | 50 mOhm @ 22A, 10V | 4V @ 60µA | 15nC @ 10V | 1580pF @ 100V | 10V | ±20V | |||
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VIEW |
3,651
In-stock
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Infineon Technologies | MOSFET N-CH 200V 24A TDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 96W (Tc) | N-Channel | 200V | 24A (Tc) | 50 mOhm @ 22A, 10V | 4V @ 60µA | 15nC @ 10V | 1580pF @ 100V | 10V | ±20V | |||
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VIEW |
1,709
In-stock
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Infineon Technologies | MOSFET N-CH 200V 24A TDSON-8 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 96W (Tc) | N-Channel | 200V | 24A (Tc) | 50 mOhm @ 22A, 10V | 4V @ 60µA | 15nC @ 10V | 1580pF @ 100V | 10V | ±20V | |||
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VIEW |
2,516
In-stock
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IXYS | MOSFET P-CH 200V 24A TO-247AD | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 300W (Tc) | P-Channel | 200V | 24A (Tc) | 150 mOhm @ 500mA, 10V | 5V @ 250µA | 150nC @ 10V | 4200pF @ 25V | 10V | ±20V |