Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FQD17N08LTF
RFQ
VIEW
RFQ
997
In-stock
ON Semiconductor MOSFET N-CH 80V 12.9A DPAK QFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 2.5W (Ta), 40W (Tc) N-Channel - 80V 12.9A (Tc) 100 mOhm @ 6.45A, 10V 2V @ 250µA 11.5nC @ 5V 520pF @ 25V 5V, 10V ±20V
FQP9N08L
RFQ
VIEW
RFQ
1,629
In-stock
ON Semiconductor MOSFET N-CH 80V 9.3A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 40W (Tc) N-Channel - 80V 9.3A (Tc) 210 mOhm @ 4.65A, 10V 5V @ 250µA 6.1nC @ 5V 280pF @ 25V 5V, 10V ±20V
FQD17N08LTM
RFQ
VIEW
RFQ
2,426
In-stock
ON Semiconductor MOSFET N-CH 80V 12.9A DPAK QFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 2.5W (Ta), 40W (Tc) N-Channel - 80V 12.9A (Tc) 100 mOhm @ 6.45A, 10V 2V @ 250µA 11.5nC @ 5V 520pF @ 25V 5V, 10V ±20V
FQD17N08LTM
RFQ
VIEW
RFQ
1,866
In-stock
ON Semiconductor MOSFET N-CH 80V 12.9A DPAK QFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 2.5W (Ta), 40W (Tc) N-Channel - 80V 12.9A (Tc) 100 mOhm @ 6.45A, 10V 2V @ 250µA 11.5nC @ 5V 520pF @ 25V 5V, 10V ±20V
FQD17N08LTM
RFQ
VIEW
RFQ
1,770
In-stock
ON Semiconductor MOSFET N-CH 80V 12.9A DPAK QFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 2.5W (Ta), 40W (Tc) N-Channel - 80V 12.9A (Tc) 100 mOhm @ 6.45A, 10V 2V @ 250µA 11.5nC @ 5V 520pF @ 25V 5V, 10V ±20V