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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	FCPF190N60-F152	RFQ VIEW	PDF RFQ	895 In-stock	ON Semiconductor	MOSFET N-CH 600V 20.2A TO-220F		SuperFET® II	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F-3	39W (Tc)	N-Channel	-	600V	20.2A (Tc)	199 mOhm @ 10A, 10V	3.5V @ 250µA	74nC @ 10V	2950pF @ 25V	10V	±20V
	FCP190N60	RFQ VIEW	PDF RFQ	2,901 In-stock	ON Semiconductor	MOSFET N-CH 600V TO220-3		SuperFET® II	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220	208W (Tc)	N-Channel	-	600V	20.2A (Tc)	199 mOhm @ 10A, 10V	3.5V @ 250µA	74nC @ 10V	2950pF @ 25V	10V	±20V
	FCPF190N60	RFQ VIEW	PDF RFQ	1,608 In-stock	ON Semiconductor	MOSFET N-CH 600V TO-220-3		SuperFET® II	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F-3	39W (Tc)	N-Channel	-	600V	20.2A (Tc)	199 mOhm @ 10A, 10V	3.5V @ 250µA	74nC @ 10V	2950pF @ 25V	10V	±20V
	FCP190N60-GF102	RFQ VIEW	PDF RFQ	3,971 In-stock	ON Semiconductor	MOSFET N-CH 600V TO-220-3		SuperFET® II	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220	208W (Tc)	N-Channel	-	600V	20.2A (Tc)	199 mOhm @ 10A, 10V	3.5V @ 250µA	74nC @ 10V	2950pF @ 25V	10V	±20V

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