Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SIHB12N60E-GE3
RFQ
VIEW
RFQ
2,936
In-stock
Vishay Siliconix MOSFET N-CH 600V 12A TO263 - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 147W (Tc) N-Channel - 600V 12A (Tc) 380 mOhm @ 6A, 10V 4V @ 250µA 58nC @ 10V 937pF @ 100V 10V ±30V
STB14NK50ZT4
RFQ
VIEW
RFQ
3,082
In-stock
STMicroelectronics MOSFET N-CH 500V 14A D2PAK SuperMESH™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 150W (Tc) N-Channel - 500V 14A (Tc) 380 mOhm @ 6A, 10V 4.5V @ 100µA 92nC @ 10V 2000pF @ 25V 10V ±30V
STB14NK50ZT4
RFQ
VIEW
RFQ
2,555
In-stock
STMicroelectronics MOSFET N-CH 500V 14A D2PAK SuperMESH™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 150W (Tc) N-Channel - 500V 14A (Tc) 380 mOhm @ 6A, 10V 4.5V @ 100µA 92nC @ 10V 2000pF @ 25V 10V ±30V
STB14NK50ZT4
RFQ
VIEW
RFQ
1,067
In-stock
STMicroelectronics MOSFET N-CH 500V 14A D2PAK SuperMESH™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 150W (Tc) N-Channel - 500V 14A (Tc) 380 mOhm @ 6A, 10V 4.5V @ 100µA 92nC @ 10V 2000pF @ 25V 10V ±30V