- Manufacture :
- Series :
- Packaging :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
8 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
2,376
In-stock
|
Infineon Technologies | MOSFET P-CH 20V 15A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 20V | 15A (Ta) | 8.2 mOhm @ 15A, 4.5V | 1.2V @ 250µA | 130nC @ 4.5V | 7980pF @ 15V | 2.5V, 4.5V | ±12V | ||||
VIEW |
827
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 100A TDSON-8 | OptiMOS™ | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.8W (Ta), 104W (Tc) | N-Channel | - | 20V | 30A (Ta), 100A (Tc) | 1.95 mOhm @ 50A, 4.5V | 1.2V @ 350µA | 85nC @ 4.5V | 13000pF @ 10V | 2.5V, 4.5V | ±12V | ||||
VIEW |
753
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 8.7A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 20V | 8.7A (Ta) | 22 mOhm @ 4.1A, 4.5V | 700mV @ 250µA | 48nC @ 4.5V | 1600pF @ 15V | 2.7V, 4.5V | ±12V | ||||
VIEW |
2,678
In-stock
|
Infineon Technologies | MOSFET P-CH 20V 6.7A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 20V | 6.7A (Ta) | 40 mOhm @ 3.2A, 4.5V | 700mV @ 250µA | 50nC @ 4.5V | 1500pF @ 15V | 2.7V, 4.5V | ±12V | ||||
VIEW |
2,072
In-stock
|
Diodes Incorporated | MOSFET N-CH 20V 5.47A SOT23 | - | Not For New Designs | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 740mW (Ta) | N-Channel | - | 20V | 5.47A (Ta) | 29 mOhm @ 6A, 10V | 1.2V @ 250µA | 5.4nC @ 4.5V | 434.7pF @ 10V | 1.8V, 10V | ±12V | ||||
VIEW |
645
In-stock
|
Diodes Incorporated | MOSFET N-CH 20V 5.47A SOT23 | - | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 740mW (Ta) | N-Channel | - | 20V | 5.47A (Ta) | 29 mOhm @ 6A, 10V | 1.2V @ 250µA | 5.4nC @ 4.5V | 434.7pF @ 10V | 1.8V, 10V | ±12V | ||||
VIEW |
2,191
In-stock
|
Diodes Incorporated | MOSFET N-CH 20V 5.47A SOT23 | - | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 740mW (Ta) | N-Channel | - | 20V | 5.47A (Ta) | 29 mOhm @ 6A, 10V | 1.2V @ 250µA | 5.4nC @ 4.5V | 434.7pF @ 10V | 1.8V, 10V | ±12V | ||||
VIEW |
3,146
In-stock
|
Infineon Technologies | MOSFET P-CH 20V 5.3A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Tc) | P-Channel | - | 20V | 5.3A (Ta) | 60 mOhm @ 5.3A, 10V | 2.5V @ 250µA | 25nC @ 10V | 860pF @ 10V | 4.5V, 10V | ±12V |